Electron mobility in semi-metal HgCdTe quantum wells: dependence on the well width.
نویسندگان
چکیده
Energy spectra, carrier concentration and electron mobility are numerically modeled in intrinsic and n-type semi-metal HgCdTe quantum wells at T = 77 K. We present results for the electron mobility calculated in a model incorporating electron scattering on longitudinal optical phonons, charged impurities, and holes, and including the 2D electron gas screening for all mentioned scattering mechanisms. Inelasticity of electron-phonon scattering is treated by means of a direct iterative solution of Boltzmann transport equation. Comparison with the experimental data at liquid helium temperature is provided.
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ورودعنوان ژورنال:
- SpringerPlus
دوره 5 شماره
صفحات -
تاریخ انتشار 2016